AFV121KH 1000 W Peak, 960-1215 MHz, 50 V Data Sheet

AFV121KH 1000 W Peak over 960-1215 MHz, 50 V RF power LDMOS transistors for pulse applications such as DME, secondary radars and transponders

AFV09P350-04NR3, AFV09P350-04GNR3 720-960 MHz, 100 W Avg., 48 V Airfast^® RF Power LDMOS Transistors – Data Sheet

The AFV09P350-04NR3 and AFV09P350-04GNR3 100 W symmetrical Doherty RF power LDMOS transistors are designed for cellular base station applications covering the frequency range of 720 to 960 MHz.

AFT31150N 150 W Pulse, 2700-3100 MHz, 32 V Data Sheet

AFT31150N 150 W Pulse over 2700-3100 MHz, 32 V Airfast^В® RF power LDMOS transistor for S-Band radars.

AFT27S012N 728-2700 MHz, 1.26 W Avg, 28 V Data Sheet

AFT27S012N 728-2700 MHz, 1.26 W Avg, 28 V Airfast ^В®, RF power LDMOS transistor for cellular base stations

AFT27S010NT1 728-3600 MHz, 1.26 W Avg., 28 V Airfast^В® RF Power LDMOS Transistor Data Sheet

The AFT27S010N 1.26 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 728 to 3600 MHz.

AFT26P100-4WSR3, AFT26P100-4WGSR3 2496-2690 MHz, 22 W Avg., 28 V Airfast^В® RF Power LDMOS Transistors Data Sheet

22 watt symmetrical Doherty RF power LDMOS transistor requiring very wide instantaneous bandwidth capability covering 2496 to 2690 MHz frequency range

AFT26HW050SR3, AFT26HW050GSR3, AFT26H050W26SR3 2496-2690 MHz, 9 W Avg., 28 V Airfast^В® RF Power LDMOS Transistors - Data Sheet

The AFT26HW050SR3, AFT26HW050GSR3 and AFT26H050W26SR3 9 watt asymmetrical Doherty RF power LDMOS transistors are designed for cellular base station applications requiring very wide instantaneous

AFT26H250W03SR6, AFT26H250-24SR6 2496-2690 MHz, 50 W AVG., 28 V Airfast^® RF Power LDMOS Transistors – Data Sheet

The AFT26H250W03SR6 and AFT26H250-24SR6 50 W asymmetrical Doherty RF power LDMOS transistors are designed for cellular base station applications requiring very wide instantaneous bandwidth capability

AFT26H200W03SR6 2496-2690 MHz, 45 W Avg., 28 V Airfast^В® RF Power LDMOS Transistor - Data Sheet

The AFT26H200W03SR6 45 watt asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering

AFT26H160-4S4R3 2496-2690 MHz, 32 W AVG., 28 V Airfast^® RF Power LDMOS Transistor – Data Sheet

The AFT26H160-4S4R3 32 watt asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 2496 to 2690 MHz.