A3T18H360W23S 1805-1880 MHz, 63 W Avg, 28 V Data Sheet
A3T18H360W23S 1805-1880 MHz, 63 W Avg, 28 V AirfastВ® RF power LDMOS transistor for cellular base stations
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A3T18H360W23S 1805-1880 MHz, 63 W Avg, 28 V Data Sheet
A3T18H360W23S 1805-1880 MHz, 63 W Avg, 28 V AirfastВ® RF power LDMOS transistor for cellular base stations
A3G18H500-04S 1805-1880 MHz, 107 W Avg, 48 V GaN Data Sheet
A3G18H500-04S 1805-1880 MHz, 107 W Avg, 48 V AirfastВ® RF power GaN transistor for cellular base stations
A2V09H525-04N 720-960 MHz, 120 W Avg, 48 V Data Sheet
A2V09H525-04N 720-960 MHz, 120 W Avg, 48 V AirfastВ® RF power LDMOS transistor for cellular base stations
A2V09H400-04N 720-960 MHz, 107 W Avg, 48 V Data Sheet
A2V09H400-04N 720-960 MHz, 107 W Avg, 48 V AirfastВ® RF power LDMOS transistor for cellular base stations
A2V09H300-04N 720-960 MHz, 79 W Avg, 48 V Data Sheet
A2V09H300-04N 720-960 MHz, 79 W Avg, 48 V AirfastВ® RF power LDMOS transistor for cellular base stations
A2V07H525-04N 595-851 MHz, 120 W Avg, 48 V Data Sheet
A2V07H525-04N 595-851 MHz, 120 W Avg, 48 V AirfastВ® RF power LDMOS transistor for cellular base stations
A2V07H400-04N 595-851 MHz, 107 W Avg, 48 V Data Sheet
A2V07H400-04N 595-851 MHz, 107 W Avg, 48 V AirfastВ® RF power LDMOS transistor for cellular base stations
A2T26H300-24 2496-2690 MHz, 60 W Avg, 28 V Data Sheet
A2T26H300-24 2496-2690 MHz, 60 W Avg, 28 V AirfastВ® RF power LDMOS transistor for cellular base stations
A2T26H165-24S 2496-2690 MHz, 32 W Avg, 28 V Data Sheet
A2T26H165-24S 2496-2690 MHz, 32 W Avg., 28 V AirfastВ® RF power LDMOS transistor for cellular base stations
A2T26H160-24SR3 2496-2690 MHz, 28 W Avg., 28 V AirfastВ® RF Power LDMOS Transistor - Data Sheet
The A2T26H160-24SR3 28 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 2496 to 2690 MHz.