MRF5S9101MR1, MRF5S9101MBR1 869-960 MHz, 100 W, 26 V GSM/GSM EDGE Lateral N-Channel RF Power MOSFETs - Archived

Designed for GSM and GSM EDGE base station applications with frequencies from 869 to 960 MHz. Suitable for multicarrier amplifier applications.

MRF5S9100MR1, MRF5S9100MBR1 880 MHz, 20 W Avg., 26 V Single N-CDMA Lateral N-Channel RF Power MOSFETs - Archived

Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common-source

MRF5S4140HR3, MRF5S4140HSR3 465 MHz, 28 W Avg., 28 V Single N-CDMA Lateral N-Channel RF Power MOSFETs - Archived

Designed for broadband commercial and industrial applications with frequencies from 400 to 500 MHz.

MRF5P21240R6 2170 MHz, 52 W Avg., 28 V, 2 x W-CDMA Lateral N-Channel RF Power MOSFET - Archived

Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellular

MRF5P21180R6 2170 MHz, 38 W Avg., 2 x W-CDMA, 28 V Lateral N-Channel RF Power MOSFET - Archived

Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.

MRF5P20180R6 1990 MHz, 38 W Avg., 2 x W-CDMA, 28 V Lateral N-Channel RF Power MOSFET - Archived

Designed for W-CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellular

MRF18085BLR3, MRF18085BLSR3 1930-1990 MHz, 85 W, 26 V, GSM/GSM EDGE Lateral N-Channel RF Power MOSFETs - Archived

Designed for GSM and GSM EDGE base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA, and multicarrier amplifier applications.

MRF18085ALR3, MRF18085ALSR3 1805-1880 MHz, 85 W, 26 V, GSM/GSM EDGE Lateral N-Channel RF Power MOSFETs - Archived

Designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS

MRF18030BLR3, MRF18030BLSR3, 1930-1990 MHz, 30 W, 26 V GSM/GSM EDGE Lateral N-Channel RF Power MOSFETs - Archived

Designed for GSM and EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. Specified for GSM 1930-1990 MHz.

MRF18030ALR3 MRF18030ALSR3 1800-1880 MHz, 30 W, 26 V, GSM/GSM EDGE Lateral N-Channel RF Power MOSFETs - Archived

Designed for GSM and EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications.