MRF8S18120HR3, MRF8S18120HSR3 1805-1880 MHz, 72 W CW, 28 V GSM, GSM EDGE Lateral N-Channel RF Power MOSFETs
Designed for GSM and GSM EDGE base station applications with frequencies from 1805 to 1880 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.
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