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MRF8S8260HR3, MRF8S8260HSR3 850-895 MHz, 70 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs
Designed for CDMA base station applications with frequencies from 790 to 895 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.
MRF8S26120HR3, MRF8S26120HSR3 2620-2690 MHz, 28 W Avg., 28 V W-CDMA, LTE Lateral N-Channel RF Power MOSFETs
Designed for W-CDMA and LTE base station applications with frequencies from 2620 to 2690 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.
MRF8S26060H, MRF8S26060HS 2620-2690 MHz, 15.5 W Avg., 28 V W-CDMA, LTE Lateral N-Channel RF Power MOSFETs
Designed for W-CDMA and LTE base station applications with frequencies from 2620-2690 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.
MRF8S23120HR3, MRF8S23120HSR3 2300-2400 MHz, 28 W Avg., 28 V LTE Lateral N-Channel RF Power MOSFETs
Designed for LTE base station applications with frequencies from 2300 to 2400 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.
MRF8S21140H, MRF8S21140HS 2110-2170 MHz, 34 W Avg., 28 V W-CDMA, LTE Lateral N-Channel RF Power MOSFETs
Designed for W-CDMA and LTE base station applications with frequencies from 2110 to 2170 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.
MRF8S21120HR3, MRF8S21120HSR3 2110-2170 MHz, 28 W Avg., 28 V W-CDMA, LTE Lateral N-Channel RF Power MOSFETs
Designed for W-CDMA and LTE base station applications with frequencies from 2110 to 2170 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.
MRF8S21100HR3, MRF8S21100HSR3 2110-2170 MHz, 24 W Avg., 28 V W-CDMA, LTE Lateral N-Channel RF Power MOSFETs
Designed for W-CDMA and LTE base station applications with frequencies from 2110 to 2170 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.
MRF8S19260HR6, MRF8S19260HSR6 1930-1990 MHz, 74 W Avg., 30 V Single W-CDMA Lateral N-Channel RF Power MOSFETs
Designed for CDMA and multicarrier base station applications with frequencies from 1930 to 1990 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.
MRF8S19140HR3, MRF8S19140HSR3 1930-1990 MHz, 34 W Avg., 28 V CDMA, W-CDMA, LTE Lateral N-Channel RF Power MOSFETs
Designed for CDMA, W-CDMA and LTE base station applications with frequencies from 1930 to 1990 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.
MRF8S18120HR3, MRF8S18120HSR3 1805-1880 MHz, 72 W CW, 28 V GSM, GSM EDGE Lateral N-Channel RF Power MOSFETs
Designed for GSM and GSM EDGE base station applications with frequencies from 1805 to 1880 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.
