MRF8S21172HR3, MRF8S21172HSR3 2110-2170 MHz, 42 W Avg., 28 V W-CDMA, LTE Lateral N-Channel RF Power MOSFETs

Designed for W-CDMA and LTE base station applications with frequencies from 2110 to 2170 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.

MRF7S38040HR3, MRF7S38040HSR3 3400-3600 MHz, 8 W Avg., 30 V, WiMAX Lateral N-Channel RF Power MOSFETs

Designed for WiMAX base station applications with frequencies up to 3800 MHz. Suitable for WiMAX, WiBro, BWA, and OFDM multicarrier Class AB and Class C amplifier applications.

MRF7S35015HSR3 3100-3500 MHz, 15 W Peak, 32 V Pulsed Lateral N-Channel RF Power MOSFET

Designed for pulsed wideband applications operating at frequencies between 3100 and 3500 MHz.

MRF7S21210HR3, MRF7S21210HSR3 2110-2170 MHz, 63 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs

Designed for CDMA base station applications with frequencies from 2110 to 2170 MHz. Can be used in Class AB and Class C for all typical cellular base station modulations.

MRF7S19210HR3, MRF7S19210HSR3 1930-1990 MHz, 63 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs

Designed for CDMA base station applications with frequencies from 1930 to 1990 MHz. Can be used in Class AB and Class C for all typical cellular base station modulations.

MRF7S18125BHR3, MRF7S18125BHSR3 1930-1990 MHz, 125 W CW, 28 V GSM, GSM EDGE Lateral N-Channel RF Power MOSFETs

Designed for GSM and GSM EDGE base station applications, with frequencies from 1800 to 2000 MHz. Can be used in Class AB and Class C for all typical cellular base station modulations.

MRF7S18125AHR3, MRF7S18125AHSR3 1805-1880 MHz, 125 W CW, 28 V GSM, GSM EDGE Lateral N-Channel RF Power MOSFETs

Designed for GSM and GSM EDGE base station applications, with frequencies from 1800 to 2000 MHz. Can be used in Class AB and Class C for all typical cellular base station modulations.

MRF7S16150HR3, MRF7S16150HSR3, 1600-1660 MHz, 32 W Avg., 28 V, WiMAX Lateral N-Channel RF Power MOSFETs

Designed for WiMAX base station applications with frequencies up to 1700 MHz. Suitable for WiMAX, WiBro, BWA, and OFDM multicarrier Class AB and Class C amplifier applications.

MRF6V10250HSR3 1090 MHz, 250 W, 50 V Pulsed Lateral N-Channel RF Power MOSFET

RF Power transistor designed for applications operating at frequencies between 1030 and 1090 MHz, 1% to 20% duty cycle. This device is suitable for use in pulsed applications.

MRF6S27050HR3, MRF6S27050HSR3 2500-2700 MHz, 7 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs

Designed for CDMA base station applications with frequencies from 2500 to 2700 MHz.