MRF7S18125BHR3, MRF7S18125BHSR3 1930-1990 MHz, 125 W CW, 28 V GSM, GSM EDGE Lateral N-Channel RF Power MOSFETs
Designed for GSM and GSM EDGE base station applications, with frequencies from 1800 to 2000 MHz. Can be used in Class AB and Class C for all typical cellular base station modulations.
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