AFT23S170-13SR3 2300-2400 MHz, 45 W Avg., 28 V Airfast^В® RF Power LDMOS Transistor - Data Sheet

The AFT23S170-13SR3 45 watt RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 2300 to 2400 MHz.

AFT23H201-24S 2300-2400 MHz, 45 W Avg, 28 V Data Sheet

AFT23H201-24S 2300-2400 MHz, 45 W Avg, 28 V Airfast^В® RF power LDMOS transistor for cellular base stations

AFT18HW355SR6 1805-1880 MHz, 63 W Avg., 28 V Airfast^В® RF Power LDMOS Transistors - Data Sheet

AFT18HW355SR6 is a 63 watt asymmetrical Doherty RF power LDMOS transistor and is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering

A2I08H040N 728-960 MHz, 9 W Avg, 28 V Data Sheet

A2I08H040N 728-960 MHz, 9 W Avg, 28 V Airfast^В® RF power LDMOS transistor for cellular base stations

A2G35S200-01S 3400-3600 MHz, 30 W Avg, 48 V GaN Data Sheet

A2G35S200-01S 3400-3600 MHz, 30 W Avg, 48 V Airfast^В® RF power GaN transistor for cellular base stations

A2G35S160-01S 3400-3600 MHz, 32 W Avg, 48 V GaN Data Sheet

A2G35S160-01S 3400-3600 MHz, 32 W Avg, 48 V Airfast^В® RF power GaN transistor for cellular base stations

A2G26H281-04S 2496-2690 MHz, 50 W Avg, 48 V GaN Data Sheet

A2G26H281-04S 2496-2690 MHz, 50 W Avg, 48 V Airfast RF power GaN transistor for cellular base stations

A2G22S251-01S 1805-2200 MHz, 48 W Avg, 48 V GaN Data Sheet

A2G22S251-01S 1805-2200 MHz, 48 W Avg, 48 V Airfast^В® RF power GaN transistor for cellular base stations

A2G22S160-01S 1800–2200 MHz, 32 W AVG., 48 V Airfast^® RF Power GaN Transistor Data Sheet

NXP^В® 32 W RF power GaN transistor designed for cellular base station applications covering the frequency range of 1800 to 2200 MHz.

AFV141KH 1000 W Peak, 1200-1400 MHz, 50 V Data Sheet

AFV141KH 1000 W Peak over 1200-1400 MHz, 50 V RF power LDMOS transistor for pulse applications such as commercial L-Band radar systems