AFT05MS031NR1, AFT05MS031GNR1 136-520 MHz, 31 W, 13.6 V Wideband RF Power LDMOS Transistors - Data Sheet

AFT05MS031NR1 and AFT05MS031GNR1 are designed for mobile two-way radio applications with frequencies from 136 to 520 MHz. The high gain, ruggedness and wideband performance of these devices make

AFT09H310-03SR6, AFT09H310-04GSR6 920-960 MHz, 56 W Avg., 28 V RF Power LDMOS Transistors - Data Sheet

AFT09H310-03S and AFT09H310-04GS 56 watt asymmetrical Doherty RF power LDMOS transistors are designed for cellular base station applications covering the frequency range of 920 to 960 MHz.

AFT09MP055NR1, AFT09MP055GNR1 764-941 MHz, 55 W, 12.5 V Broadband RF Power LDMOS Transistors - Data Sheet

AFT09MP055N and AFT09MP055GN are designed for mobile two-way radio applications with frequencies from 764-941 MHz

AFT09MS007NT1 136-941 MHz, 7 W, 7.5 V Wideband RF Power LDMOS Transistor - Data Sheet

The AFT09MS007NT1 is designed for handheld two-way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this device makes it ideal for large

AFT09MS015NT1 136-941 MHz, 16 W, 12.5 V Wideband RF Power LDMOS Transistor - Data Sheet

The AFT09MS015N is designed for mobile two-way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this device make it ideal for large

AFT09MS031NR1, AFT09MS031GNR1 764-941 MHz, 31 W, 13.6 V Wideband RF Power LDMOS Transistors - Data Sheet

AFT09MS031N and AFT09MS031GN are designed for mobile two-way radio applications with frequencies from 764 to 941 MHz. The high gain, ruggedness and broadband performance of these devices make

AFT09S200W02NR3, AFT09S200W02GNR3 716-960 MHz, 56 W AVG., 28 V Airfast^В® RF Power LDMOS Transistors - Data Sheet

AFT09S200W02NR3 and AFT09S200W02GNR3 56 W RF power LDMOS transistors are designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency

AFT09S200W02SR3 920-960 MHz, 56 W Avg., 28 V Airfast^В® RF Power LDMOS Transistor Data Sheet

AFT09S200W02S 56 W RF power LDMOS transistor for cellular base station applications requiring very wide instantaneous bandwidth in the 920-960 MHz band

AFT09S220-02N 850-960 MHz, 54 W Avg, 28 V Data Sheet

AFT09S220-02N 850-960 MHz, 54 W Avg, 28 V Airfast^В® RF power LDMOS transistor for cellular base stations

AFT09S282NR3 720-960 MHz, 80 W AVG., 28 V Airfast^В® RF Power LDMOS Transistor - Data Sheet

The AFT09S282NR3 80 watt RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 720 to 960 MHz.