MRF6S21100NR1, MRF6S21100NBR1 2110-2170 MHz, 23 W Avg., 28 V, 2 x W-CDMA Lateral N-Channel RF Power MOSFETs

Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.

MRF6S23100HR3, MRF6S23100HSR3 2300-2400 MHz, 20 W Avg., 28 V, 2 x W-CDMA Lateral N-Channel RF Power MOSFETs

Designed for CDMA base station applications with frequencies from 2300 to 2400 MHz. Suitable for WiMAX, WiBro and multicarrier amplifier applications. To be used in Class AB and Class C for WLL

MRF6S23140HR3, MRF6S23140HSR3 2300-2400 MHz, 28 W Avg., 28 V, 2 x W-CDMA Lateral N-Channel RF Power MOSFETs

Designed for CDMA base station applications with frequencies from 2300 to 2400 MHz. Suitable for WiMAX, WiBro and multicarrier amplifier applications. To be used in Class AB and Class C WLL

MRF6S24140HR3, MRF6S24140HSR3 2450 MHz, 140 W, 28 V CW Lateral N-Channel RF Power MOSFETs

Designed primarily for large-signal output applications at 2450 MHz. Devices are suitable for use in industrial, medical and scientific applications.

MRF6S27050HR3, MRF6S27050HSR3 2500-2700 MHz, 7 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs

Designed for CDMA base station applications with frequencies from 2500 to 2700 MHz.

MRF6V10250HSR3 1090 MHz, 250 W, 50 V Pulsed Lateral N-Channel RF Power MOSFET

RF Power transistor designed for applications operating at frequencies between 1030 and 1090 MHz, 1% to 20% duty cycle. This device is suitable for use in pulsed applications.

MRF7S16150HR3, MRF7S16150HSR3, 1600-1660 MHz, 32 W Avg., 28 V, WiMAX Lateral N-Channel RF Power MOSFETs

Designed for WiMAX base station applications with frequencies up to 1700 MHz. Suitable for WiMAX, WiBro, BWA, and OFDM multicarrier Class AB and Class C amplifier applications.

MRF7S18125AHR3, MRF7S18125AHSR3 1805-1880 MHz, 125 W CW, 28 V GSM, GSM EDGE Lateral N-Channel RF Power MOSFETs

Designed for GSM and GSM EDGE base station applications, with frequencies from 1800 to 2000 MHz. Can be used in Class AB and Class C for all typical cellular base station modulations.

MRF7S18125BHR3, MRF7S18125BHSR3 1930-1990 MHz, 125 W CW, 28 V GSM, GSM EDGE Lateral N-Channel RF Power MOSFETs

Designed for GSM and GSM EDGE base station applications, with frequencies from 1800 to 2000 MHz. Can be used in Class AB and Class C for all typical cellular base station modulations.

MRF7S19210HR3, MRF7S19210HSR3 1930-1990 MHz, 63 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs

Designed for CDMA base station applications with frequencies from 1930 to 1990 MHz. Can be used in Class AB and Class C for all typical cellular base station modulations.